Resistive memories, in particular OxRAM (Oxide Random Access Memory), are promising structures to address future generations of embedded non-volatile memories. OxRAM are indeed simple, scalable, fast and they can operate at low voltage compared to FLASH memories currently used in the industry.

Moreover, OxRAM can be integrated in the front-end of the line (FEOL), close to the most advanced node transistors, as the materials used in the OxRAM stack are compatible with advanced gate stack materials. Therefore OxRAM are also attractive from a high density standpoint inherent to FEOL design rules.

The objective of the PhD thesis will be to take advantage of those assets to propose innovative OxRAM memories co-integrated with next generation SOI transistors. Those new memories will then be fabricated and characterized.

This position is open until it is filled.

Department: Département Composants Silicium (LETI)
Laboratory: Laboratoire Mémoires
Start Date: 01-09-2015
ECA Code: SL-DRT-15-0121
Contact: laurent.grenouillet<στο>cea.fr