It was recently demonstrated that FDSOI (Fully-Depleted Silicon-On-Insulator) transistors electrical characteristics can be sensitive to light illumination provided a diode is monolithically integrated below the BOX (Buried Oxide). In particular the transistor threshold voltage (VT) is significantly tuned by light illumination with this architecture, potentially enabling highly integrated new functions like light detection for More Than Moore applications.

The objectives of the Ph.D. thesis will be to use the benefits of this innovative architecture, optimize it to define potential applications for instance in the field of imaging

This position is open until it is filled.

Department: Département Composants Silicium (LETI)
Laboratory: Laboratoire Composants Logiques
Start Date: 01-09-2015
ECA Code: SL-DRT-15-0130
Contact: olivier.rozeau<στο>cea.fr