This PhD subject follows the PhD theses of R. Taibi (2012) and Y. Beilliard (2015) conducted on the behaviour and the reliability of interconnections made by direct bonding in a wafer-to-wafer scheme (W2W) and some testing done on samples made using a die-to-wafer integration (D2W). This subject is oriented on this last integration scheme in order to compare the performances of these two integrations from a reliability point of view (electromigration, barrier integrity…).

This PhD subject follows on from the work done during the internship referenced LCFC_2015-SM1FR (www.minatec.org) which should start the definition of a predictive model for estimating the electromigration lifetime of integrations based on hybrid bonding (Cu-SiO2) for a Die-to-Wafer integration scheme (D2W).

This study will be completed/refined by the use of an instrumented SEM (Gousseau’s PhD [2015]), which allows to perform electromigration tests with real-time imaging in order to have a fine understanding of the failure mechanism.

In addition to this principal theme, the copper diffusion will be investigated because in such integration, copper has no continuous barrier. Thus, it is necessary to determine the criticality of the point and find eventually some remedies.

All this work is intended to propose ways to improve this advanced module both from a manufacturing/process and architecture point of view.

This position is open until it is filled.

Department: Département Composants Silicium (LETI)
Laboratory: Laboratoire de Caractérisation et Fiabilité des Composants
Start Date: 01-09-2015
ECA Code: SL-DRT-15-0681
Contact: stephane-nico.moreau<στο>cea.fr