Postdoc in MOCVD growth of GaN on Si and characterization of layers

At the Faculty of Engineering and Science, Department of Department of Physics and Nanotechnology (www.nano.aau.dk) a position as postdoc in MOCVD growth of GaN on Si and characterization of layers is open for appointment from March 15, 2015 or soon thereafter. The position is available for a period of 2 years. Department of Physics and Nanotechnology has it core competences in different aspects of solid state physics, optical physics, bio physics, and nanotechnology. The research spans from basic science to advanced applications of physics and biotechnology. Educational activities at the Department are primarily within the engineering BSc. and MSc. programs in Nanotechnology and the MSc. program in Physics. The Department hosts the university clean room (NanoLab) with modern equipment for fabrication and characterization of micro- and nanoscale components.   

Job description

The position is affiliated with the strategic research project Semiconductor Materials for Power Electronics (SEMPEL) funded by The Danish Council for Strategic Research. 

The research will be carried out in close collaboration with the Department of Energy Technology of Aalborg University, iNANO/Department of Physics of Århus University, Delft University of Technology (The Netherlands), Chalmers University of Technology (Sweden) and Institute of Electronic Materials Technology (Poland).

MOCVD growth of GaN on Si and characterization of layers.

Power electronics provides efficient and optimized control of electricity in applications ranging from consumer electronics over electric motors to grid connections of energy supply systems. Gallium nitride is a promising new semiconductor for power electronics. However, GaN components must be grown as thin films and Si wafers are the most promising substrates for mass production. This leads to multilayer and multi element structures that introduce new materials challenges due to large differences in lattice constants and thermal properties with control of defects as a major challenge. This project will investigate routes to reduce strain and control defects in GaN epi-layers on Si and develop approaches to fabricate good-quality layers using MOCVD by optimization of substrate properties and growth processes.

Expected results: New buffer layer systems and MOCVD processes for growth of Si-based GaN layers with reduced dislocation density. Systematic data on physical analysis of structure and properties of the fabricated layers.

Limited teaching within the area can be expected, but also in other study programmes at the University. 

You may obtain further professional information from Associate Professore Vladimir Popok, phone +45 9940 9229, email: vp<στο>nano.aau.dk concerning the scientific aspoects of the position 

Qualification requirements:
 
Appointment as Postdoc presupposes scientific qualifications at PhD–level or similar scientific qualifications. The research potential of each applicant will be emphasized in the overall assessment. Appointment as a Postdoc cannot exceed a period of four years in total at Aalborg University. 

The application must contain the following: 
• A motivated text wherein the reasons for applying, qualifications in relation to the position, and intentions and visions for the position are stated.
• A current curriculum vitae. 
• Copies of relevant diplomas (Master of Science and PhD).
• Scientific qualifications. A complete list of publications must be attached with an indication of the works the applicant wishes to be considered. You may attach up to 5 publications.
• Dissemination qualifications, including participation on committees or boards, participation in organisations and the like. 
• Additional qualifications in relation to the position. 
• References/recommendations. 
• Personal data.

The applications are only to be submitted online by using the "Apply online" button below.

An assessment committee will assess all candidates.

For further information concerning the application procedure please contact Mads Brask Andersen by mail hr-teknat-sund<στο>adm.aau.dk or phone (+45) 9940 9680.

 
Information regarding guidelines, ministerial circular in force and procedures can be seen here 

Agreement

Employment is in accordance with the Ministerial Order on the Appointment of Academic Staff at Universities (the Appointment Order) and the Ministry of Finance’s current Job Structure for Academic Staff at Universities. Employment and salary are in accordance with the collective agreement for state-employed academics or the collective agreement for academics under the Danish Society of Engineers’ (IDA) and the Danish Association of Chartered Surveyors’ (DDL) negotiation areas.   

Vacancy number

P21455

Deadline

25/01/2015Apply online