The Computational Nanoelectronics Group (www.nano-tcad.ethz.ch) at the Integrated Systems Laboratory (www.iis.ee.ethz.ch) of ETH Zurich is developing and applying advanced simulation tools to study the properties of nanoscale devices. For a European Union (EU) research project investigating III-V transistors as potential replacement for Si MOSFETs, we are looking for a
Ph.D. student in modeling of III-V field-effect transistors
Job description: Driven by Moore’s scaling law, the size of transistors, the active components of integrated circuits, has kept decreasing from one generation to the other. As a consequence of this miniaturization process, Silicon, the material of reference in the semiconductor industry, is approaching its physical limits in terms of electron velocity and power consumption. To build the next generation logic switches with sub-20 nm gate lengths, other materials such as III-V compound semiconductors have started to attract a lot of attention due to their better electron transport properties and their potential to deliver higher drive currents at lower supply voltages. However, the path towards a mass production of III-V field-effect transistors (FETs) is still very long and paved with several obstacles: (i) high source and drain contact resistances, (ii) significant source-to-drain and band-to-band tunneling currents, (iii) non-ideal semiconductor-oxide interfaces, and (iv) low electron concentrations limiting the maximally achievable currents. The goal of this EU project is to address these issues through computer aided design (CAD). The first task will be to analyze the limiting factors of the III-V technology applied to ultra-short FETs. In a second step the available design space will be explored in order to provide design guidelines to the experimental groups involved in the project. Simulation tools ranging from the classical drift-diffusion model up to atomistic quantum transport will be used for that purpose. Strong interactions with the industry are expected.
Applicants should have a Diploma or Master degree in electrical engineering, physics, material science, or in a related discipline, good programming skills (Fortran and/or C/C++), knowledge about semiconductor device physics, and interest for physics-based modeling and simulation. The participation in international conferences and the collaboration with industry and academia is strongly encouraged and supported.