We are looking for a highly motivated postdoctoral fellow to work on electronic devices based on III-Nitride semiconductors (GaN, AlGaN, AlN, etc.) for power electronics applications.

The successful candidate will focus on the MOCVD growth and characterization of III-Nitride materials, which will be closely combined to simulations and device fabrication in our group. The ultimate goal is to investigate novel heterostructures and demonstrate new and much more efficient power electronic devices.

The successful candidate will join the new laboratory of Professor Elison Matioli, and will focus on the growth, simulation, and characterization of III-Nitride materials. The candidate will have the opportunity of doing high-level research in a top-ranked engineering school, working closely with an assistant professor in a new and very dynamic laboratory. In addition, the successful candidate will have the opportunity to get good experience in building a laboratory and in guiding PhD and Master students.

The ideal candidate should have solid experience on III-Nitride growth by MOCVD (or MBE) and materials characterization, to take advantage of the state-of-the-art growth and characterization facilities existing at EPFL. In addition, experience with device simulation and strong interest in electronic devices for power applications are well desired. Experience with electronic device fabrication in cleanroom environment is very welcome. Candidates must hold PhD degree (or anticipate a PhD degree prior to starting the postdoc), have a strong publication record and be very motivated to pursue high-level scientific research.

Send your application including cover letter to:<input type="text" class="email-value js-email-value" id="email-value" readonly="readonly" value="Ecole_Polytechnique-idjzkf-837380@jobs.researchgate.net" style="margin: 0px; font-size: 12px; vertical-align: middle; outline: 0px; padding: 3px; cursor: text; width: 384px; border-style: none; font-weight: bold; color: rgb(68, 68, 68); box-shadow: none; -webkit-transition: all 0.1s linear; transition: all 0.1s linear; background-image: initial; background-attachment: initial; background-size: initial; background-origin: initial; background-clip: initial; background-position: initial; background-repeat: initial; " />