Metalorganic Chemical Vapor Deposition (MOCVD) of chalcogenide (In-Ge-Sb-Te): substrate functionalization, deposition study and morphological and electrical characterization.
Description
The development of new phase change materials based on chalcogenides and their integration in PCM devices is the subject of different projects, where our institution is involved and deals with the growth of chalcogenide materials by MOCVD, as well as with structural, compositional, electrical and thermal characterization.
Important issues for development and commercialization of PCM in the near future are the increase of the storage capacity per cell and the reduction of the power consumption and costs. This can be achieved by further pushing down to the nano-scale the size of the chalcogenide-based memory cells, since lowering active material volumes to be programmed requires shorter and less intense current pulses and, at the same time, provides higher cell density.
A very attractive option involves the use of chalcogenide nanowires (NWs) for highly scaled PCM devices and multi-level memory applications. In- and Ge-telluride based NWs are synthesized by MOCVD at MDM and studied with the final goal of realizing and evaluating NW-based structures (M. Longo et al.,Nano Lett., 2012, 12 (3), pp 1509–1515).
The position winner will operate in the framework of the European FP7 SYNAPSE project and will deal with the MOCVD deposition and characterization of single material and core-shell nanowires of the In-Ge-Te, In-Sb-Te and Ge-Sb-Te systems, starting from different bottom-up approaches on both flat and patterned substrates (templates). SEM observations will be extensively employed for immediate check; EBL will be necessary for substrate pre-tratment and feedback for optimization will be provided by SEM and electrical analysis.
Nr of positions available : 1
Research Fields
Chemistry - Heterogeneous catalysis
Physics - Condensed matter properties
Technology - Nanotechnology
Career Stage
Experienced researcher or 4-10 yrs (Post-Doc)
Research Profiles
First Stage Researcher (R1)
Benefits
Free shuttle bus connecting the working place with Milan and main villages around;
1 free meal per day at the canteen.
Comment/web site for additional job details
For the application to positions in Italy is necessary to apply to a public selection, as stated in the relative call “Bando”, whose deadline is 21 November 2014 and which can be downloaded from the link: www.mdm.imm.cnr.it/sites/default/files/open-positions/5281_DOC_IT.pdf. Instructions are provided only in Italian, but we can provide assistance to foreign applicants.
Requirements
ENGLISH |
Basic |
Good |
ITALIAN |
Clean room experience, synthesis and characterization of nanostructures. | |
PhD in Physics or Chemistry or Materials Science, or Materials Engineering or Nanotechnology or equivalent disciplines; experience in electrical measurements, electronic microscopy, Electron beam lithography,CVD techniques, nanopatterning. |