We propose to develop a new device defined as a reconfigurable silicon nanowire transistor. This novel concept is based on a universal transistor that can be reversely configured as p-FET or n-FET by changing the polarity of source and drain Schottky junctions. The activity of the postdoc will be focused both on the simulation and the fabrication of reconfigurable MOSFET transistor. A preliminary theoretical work will be performed to deeply understand the working principle of the device and optimize the carrier injection through the source/drain Schottky barrier. Then, the candidate will monitor the fabrication of silicon nanowire FETs with controllable polarity from existing mask sets.

This position is open until it is filled.

Département: Département Composants Silicium (LETI)
Laboratory: Laboratoire Composants Logiques
Start Date: 01-05-2015
ECA Code: PsD-DRT-15-0043
Contact: sylvain.barraud<στο>cea.fr