This 36-month fixed-term post (with an expected start date of 01 June 2015, ending 31 May 2018) offers an exciting opportunity to join the Department of Electronic and Electrical Engineering (EEE) to work on Avalanche Photodiode research.
You will also be joining the consortium of Postgraduate Research on Dilute Metamorphic Nanostructures and Metamaterials in Semiconductor Photonics (PROMIS), a Marie Skłodowska-Curie Innovative Training Network funded by the European Union. The PROMIS consortium members are University of Sheffield, Lancaster University, University of Nottingham, University College Cork, III-V Lab (France), University of Cadiz, University of Montpellier 2, Sapienza University of Rome, University of Marburg, and Sgenia (Spain). Partner organisations include IQE plc (UK), e2v (UK), GSS (UK), SIKEMIA (France), Universidad Autonoma de Madrid (Spain), NAsP III-Vs (Germany), and ID Quantique (Switzerland).
Due to the funding, this position is subject to the Marie Curie fellowships terms and conditions. Candidates applying for this position must (at the time of recruitment) be in the first four years (full-time equivalent research experience) of their research careers and not yet have a doctoral degree. This is measured from the date when they obtained the degree which would formally entitle them to embark on a doctorate. They must not have resided or carried out their main activity (work, studies, etc.) within the UK for more than 12 months in the three years immediately prior to their recruitment.
You will be registered for PhD training while employed by the University on the training network. The title of the PhD project is “Nanometre wide avalanche regions for high performance single photon avalanche photodiodes (SPADs)”.
You will be expected carry out device design, device fabrication, and experiments for the project, as well as collaborating closely with other early career researchers at partner institutions within the consortium. You should possess a good degree in Electronic Engineering, Physics or other relevant field, and demonstrate sound understanding of semiconductor opto-electronic Device Physics. You also need to have track records in effective communication skills (written and verbal), team working, and individual project management. In addition, it is desirable to have experience of semiconductor device fabrication and conference/journal publication(s)