JOB DESCRIPTION
PhD on Growth and Characterisation of Dilute Nitride GaSbN Quantum Dot Intermediate Band Solar Cells
Salary: Circa € 30,000 per annum
To carry out research into the epitaxial growth of gallium antimonide based quantum dot materials for the development of novel solar cells using molecular beam epitaxy (MBE). The research will involve systematic MBE growth studies of GaSb quantum dots, characterisation of the resulting materials using photoluminescence and photocurrent spectroscopy, electrical and structural measurements. Prototype intermediate band solar cells will also be fabricated and extensively tested.
DESIRED SKILLS AND EXPERIENCE
You must have at least an MPhys first class (hons) or 2(i) (or equivalent) in Physics or Electrical Engineering or a closely related subject. A sound understanding of semiconductor physics and the operating principles of infrared LEDs is essential. Some knowledge and experience in the growth and characterisation of Sb containing alloys for use in optoelectronic devices would be desirable. In addition, you should be a good communicator and able to work as part of a team, with good inter-personal skills. You should be familiar with preparing scientific publications and presenting conference papers.
This is a three year fixed term appointment which is part of the new Marie Sklodowska-Curie Initial Training network : Postgraduate Research on Dilute Metamorphic Nanostructures and Metamaterials in Semiconductor Photonics (PROMIS) http://www.physics.lancs.ac.uk/promis/
You will be required to satisfy the eligibility criteria for Marie Sklodowska-Curie Early Stage Researchers:
- Must be within the first four years (full-time equivalent) of their research career
- Must not have resided or carried out their main activity (work, studies, etc.) within the UK for more than 12 months in the three years immediately prior to their recruitment
Further information available from: Prof. A. Krier a.krier<στο>lancaster.ac.uk
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